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As the third generation semiconductor material, silicon carbide can be used to make a new generation of high-efficiency and energy-saving power electronic devices, and is widely used in various fields such as air conditioning, photovoltaic power generation, wind power generation, high-efficiency electric motors, hybrid and pure electric vehicles, high-speed trains and so on. 


Silicon carbide furnace is an indispensable key equipment for producing silicon carbide crystal. The device adopts induction heating to sublimate the silicon carbide powder from the graphite crucible and deposit it on the silicon carbide seed crystal in the process gas environment, which is to grow the 6-inch silicon carbide crystal by physical gas phase transfer (PVT) method.